METHOD OF MANUFACTURING ALN SINGLE CRYSTAL, AND ALN SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an AlN single crystal capable of suppressing quality deterioration due to sublimation of a SiC substrate, and a AlN single crystal substrate formed by the method of manufacturing. SOLUTION: The method of manufacturing an AlN single crystal (a nitride single crystal film 1) comprises: a process of preparing a SiC substrate (a base substrate 9); a process of preparing a (SiC)1-x(AlN)xpowder (a raw material mixed powder 5) by mixing a SiC powder and an AlN powder; and a process of forming the nitride single crystal film 1 on one main surface of the base substrate 9 using the raw material mixed powder 5. In addition, SiC may be contained in the AlN single crystal (the nitride single crystal film 1). COPYRIGHT: (C)2011,JPO&INPIT