| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents a threshold loss of a transistor during erasure to improve erase characteristics. <P>SOLUTION: A control system sets, to an inactive state (low level), drive signals for adjacent word lines WL0 and WL2 connected to memory cells 111-0 and 111-2 connected to a non-selected second bit line/BL, and activates (sets to a high level) a drive signal for a selected word line WL1 connected to a memory cell 111-1 connected to a selected first bit line BL. Thereafter, the control system holds the selected word line WL1 in a floating state, activates the adjacent word lines WL0 and WL2 (to high level), and capacitive-couples the adjacent word lines WL0 and WL2 with the selected word line WL1, thereby driving the selected word line WL1 to boost the voltage of the selected word line WL1. <P>COPYRIGHT: (C)2011,JPO&INPIT |
