| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which forms a conformal dielectric film having Si-N bonds on a semiconductor substrate by a plasma enhanced chemical vapor deposition (PECVD). SOLUTION: The method includes a step which introduces a nitrogen and hydrogen containing reaction gas and rare gas into a reaction space in which a semiconductor substrate positioned is placed, a step which applies an RF power into the reaction space, and a step which introduces a precursor containing a silicon gas with hydrogen into the reaction space in a state in which a pulse has a duration not longer than five sec, introduces the reaction gas and rare gas without interruption while the plasma is excited, thereby forming a conformal dielectric film having the Si-N bond on the substrate. COPYRIGHT: (C)2011,JPO&INPIT |
