| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a layer of a monocrystalline material on a substrate. SOLUTION: The method includes a step of loading a substrate having an exposed area and made of a first monocrystalline material in a processing chamber, and a step of supplying a beam of neutral species of a second material toward the substrate in the presence of a diffusion limiting gas, such that the pressure in the processing chamber is between 1×10<SP>-6</SP>torr and 1×10<SP>-4</SP>torr, so that the neutral species of the second material are absorbed on the exposed area, and thereby growing a monocrystalline layer of the second material overlying and in contact with the first monocrystalline material, wherein the diffusion limiting gas is a non-reactive gas. COPYRIGHT: (C)2011,JPO&INPIT |
