| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of detecting LPDs on a wafer surface for highly accurately detecting LPDs on a wafer surface when detecting the LPDs on the wafer surface by using laser light. SOLUTION: The method of detecting LPDs on a wafer surface includes: a process for obtaining a first dark field image by using light coming from a light source, through a first optical path, into a detector to inspect a wafer surface by using a microscope which can photograph a dark field image, the microscope being equipped with a light source emitting laser light and a detector for detecting light which is laser light applied to the wafer surface from the light source and scattered/irregularly reflected on the wafer surface; a process for using the microscope which can photograph a dark field image to inspect the wafer surface by using light coming from the light source, through an optical path different from the first optical path, into the detector, thereby obtaining at least one dark field image; and a process for detecting the LPDs by using the first dark field image and the at least one dark field image. COPYRIGHT: (C)2011,JPO&INPIT
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