发明名称 Photomask and pattern formation method using the same
摘要 A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.
申请公布号 US7914953(B2) 申请公布日期 2011.03.29
申请号 US20080204252 申请日期 2008.09.04
申请人 PANASONIC CORPORATION 发明人 SHIMIZU TADAMI;MISAKA AKIO;SASAGO MASARU
分类号 G03F1/32;G03F1/36;G03F1/68;H01L21/00 主分类号 G03F1/32
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