发明名称 |
Photomask and pattern formation method using the same |
摘要 |
A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through.
|
申请公布号 |
US7914953(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20080204252 |
申请日期 |
2008.09.04 |
申请人 |
PANASONIC CORPORATION |
发明人 |
SHIMIZU TADAMI;MISAKA AKIO;SASAGO MASARU |
分类号 |
G03F1/32;G03F1/36;G03F1/68;H01L21/00 |
主分类号 |
G03F1/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|