| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging element, wherein a step shape for suppressing light interference is formed on an incident surface of light while suppressing the number of processes. SOLUTION: An interlayer dielectric 4 is formed on a surface of a silicon substrate 2 with a photoelectric conversion element 3 formed thereon. A pad electrode 8 is formed on a surface of the interlayer dielectric. A protective film 10 for covering the interlayer dielectric and the pad electrode is formed. A resist 20 is patterned on a surface of the protective film to form a first opening 20a formed in a position opposite to the photoelectric conversion element and a second opening 20b formed in a position opposite to the pad electrode. Isotropic etching is carried out on the protective film through the first opening and second opening. COPYRIGHT: (C)2011,JPO&INPIT
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