| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. <P>SOLUTION: The method of removing a heavy metal in a semiconductor substrate includes: attaching a substance lowering a potential barrier of a rear surface of the semiconductor substrate to the rear surface, wherein a circuit is to be formed or has been formed on a top surface of the semiconductor substrate; applying thermal treatment to the semiconductor substrate under a condition based on a thickness and a resistivity of the semiconductor substrate; and depositing a heavy metal inside the semiconductor substrate on the rear surface. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
