| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method without causing dispersion of channel resistance in order to eliminate dispersion of on-resistance of a DMOS transistor. <P>SOLUTION: After a first body region is formed on a semiconductor substrate, a gate electrode film is laminated on a gate oxide film. Photoresist is used as a mask to form a second body region, and an opening is formed. In this invention, impurity ions are implanted into the opening while the photoresist is left, and the second body region constituting a channel region is formed. In addition, a first source region is formed using the same mask. Next, a gate electrode is formed, a side spacer is formed, and thereafter a second source region and a drain region are formed at the same time. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
