| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an SiC crystal growth layer capable of reducing carbon air holes present in SiC crystal even if the layer is thick. SOLUTION: In a step for growing a drift layer 23 as an SiC crystal growth layer, a second period is provided which supplies only propane from among silane as silicon material gas and propane as carbon material gas to a crystal growth surface. By this, the degree of over-saturation of the carbon on the crystal growth surface is raised to generate excessive inter-lattice carbons on the surface in the middle of growth. So, the number of carbon air holes is reduced at a relatively deep point being away from the surface of the drift layer 23 as the grown-up SiC crystal growth layer. COPYRIGHT: (C)2011,JPO&INPIT
|
