| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of improving characteristics of a MRAM in a semiconductor device including the MRAM. SOLUTION: Plasma treatment is applied on a surface of an interlayer insulation film IL3 having a line L3 and a digit line DL. First, a semiconductor substrate 1S is carried into a chamber, and a mixture gas comprising molecules (ammonia gas) containing nitrogen and inert molecules (hydrogen gas, helium or argon) not containing nitrogen is introduced into the chamber. By this, the mixture gas is introduced is such a state that a flow rate of the inert molecule not containing nitrogen is larger than that of the nitrogen-containing molecule to make the mixture gas into plasma, and the plasma treatment is performed. COPYRIGHT: (C)2011,JPO&INPIT
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