| 摘要 |
A three-dimensional semiconductor integrated circuit device is provided. A first semiconductor chip includes a solid-state circuit and is smaller than a base, and is stacked on the base. The first chip is buried by a first filling material having approximately the same contour as the base. Buried electrodes that penetrate through the first chip along its thickness direction are formed in the first chip. A second semiconductor chip includes a solid-state circuit and is smaller than the base, and is stacked on the first chip. The second chip is buried by a second filling material having approximately the same contour as the base. Buried electrodes that penetrate through the second chip along its thickness direction are formed in the second chip. The first and second filling materials have processibilities required for forming the buried electrodes and thermal expansion coefficients equivalent to those of the first and second chips, respectively.
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