摘要 |
PROBLEM TO BE SOLVED: To provide a method for simply and effectively reducing B (Boron) in the refining of silicon. SOLUTION: The method for producing high purity Si includes: heating and melting Si containing B as an impurity and flux; blowing a gas into a molten liquid containing molten Si and flux as needed; and then, performing operations for separating the Si from the flux several times to remove the B in the Si. When the concentration of B in the Si after the operations of (m) and (n) times (m<n, n≥2) is defined as [B]minSi and [B]ninSi, the concentration of B in the flux is defined as [B]minf and [B]ninf, respectively, and the ratio of the concentration of B in the Si and in the flux is defined as LBm=[B]minf/[B]minSi and LBn=[B]ninf/[B]ninSi respectively, the relation of LBm≤LBn is satisfied. COPYRIGHT: (C)2011,JPO&INPIT
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