发明名称 PLASMA PROCESSING APPARATUS
摘要 Uniformity of a process on a substrate is improved. A plasma processing apparatus including a processing container which is formed of metal and receives a substrate to be plasma-processed, an electromagnetic wave source which supplies an electromagnetic wave required to excite plasma in the processing container, and a plurality of dielectrics, through which the electromagnetic wave supplied from the electromagnetic wave source transmits to the inside of the processing container and which have a part that is exposed to the inside of the processing container, on a lower surface of a lid of the processing container, wherein a metal electrode, which is electrically connected to the lid, is formed on a lower surface of each dielectric, a part of each dielectric exposed between the lower surface of the lid and the metal electrode has a substantially polygonal outline when viewed from the inside of the processing container, the plurality of dielectrics are disposed with vertical angles of the polygonal outlines being adjacent to each other, and a surface wave propagating portion, through which the electromagnetic wave is propagated, is formed on the lower surface of the lid exposed inside the processing container and a lower surface of the metal electrode.
申请公布号 US2011146910(A1) 申请公布日期 2011.06.23
申请号 US20090997122 申请日期 2009.06.05
申请人 TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY 发明人 HIRAYAMA MASAKI;OHMI TADAHIRO
分类号 C23F1/08;C23C16/50 主分类号 C23F1/08
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