| 摘要 |
A nitride semiconductor laser device includes: a stack, the stack including an n-type layer and a p-type layer each including a nitride semiconductor; an n-electrode electrically coupled to the n-type layer; a p-electrode electrically coupled to the p-type layer; and a thermally conductive portion disposed in contact with the p-type layer in a region which is different from the region where the p-electrode is connected, wherein the thermally conductive portion is electrically insulated from the p-electrode. Manufacturing steps specific to nitride semiconductors are employed to form the device. An optical apparatus, such as an optical disc device, a display device, or a lighting device includes such a nitride laser device and depends its functions thereto.
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