发明名称 Phase-change memory security device
摘要 A semiconductor chip having a subcircuit formed in a substrate; and a phase-change memory cell located on the subcircuit, and configured to directly detect an attack on the subcircuit, or to form a shield to prevent physical access to the subcircuit.
申请公布号 US7982488(B2) 申请公布日期 2011.07.19
申请号 US20090474648 申请日期 2009.05.29
申请人 INFINEON TECHNOLOGIES AG 发明人 NIRSCHL THOMAS;GAMMEL BERNDT;RUEPING STEFAN;KAKOSCHKE RONALD;DIRSCHERL GERD;SCHLAZER PHILIP
分类号 H03K19/00;G11C11/34 主分类号 H03K19/00
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