SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a fin structure of Ge or SiGe formed with a (110) plane on a side face, and to contribute to improvement of an element characteristic of a Fin FET or the like. SOLUTION: The semiconductor device having a fin structure part of Ge or SiGe includes: element isolation insulating films 12 embedded and formed on a front surface part of a Si substrate 10 to sandwich stripe regions elongated in one direction and formed up to positions higher than the substrate surface; SiGe buffer layers 14 formed on the stripe regions and having the uppermost surfaces located at positions lower than the uppermost surface of the element isolation insulating films; and Ge fin structures 16 formed on the buffer layers 14, small in width in the direction orthogonal to the one direction relative to that of the layer 14 and each having a (110) plane vertical to the substrate surface. COPYRIGHT: (C)2011,JPO&INPIT