| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device having through-electrodes. SOLUTION: A semiconductor substrate 1 has a first surface 1a which is an element forming surface, and a second surface 1b on the opposite side. Through-holes 20 are formed to penetrate the semiconductor substrate 1 from the first surface 1 to the second surface 1b. An insulating film 21 and a barrier film 22 are sequentially formed on the inner wall of the through-hole 20. A conductor 23 is formed to fill the through-hole 20 formed with the insulating film 21 and the barrier film 22. A gettering site 30 is formed on at least the first surface 1a side of the semiconductor substrate 1 at a portion located around the through-hole 20. COPYRIGHT: (C)2011,JPO&INPIT |
