| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a single crystal of sapphire, in which generation of a crystal defect due to deviation of crystal orientation can be prevented. SOLUTION: The apparatus 1 for producing the single crystal of sapphire is characterized in that a seed crystal and a raw material are housed in a crucible 20 supported by a supporting member 3, the crucible 20 is disposed in a cylindrical heater 14 in a crystal growth furnace 10 and heated by the cylindrical heater 14 so that the raw material and a part of the seed crystal are melted and crystallized. A cooling means is arranged for annularly cooling the predetermined outer peripheral position of the crucible 20 having a cup-like shape. The cooling means includes a projected peripheral part 21 of the crucible 20 and the supporting means 3 annularly in surface contact with the projected peripheral part 21 to support the crucible 20 and is arranged so that the undersurface of the crucible 20 is parted from the supporting member 3. Accordingly, the heat is transferred from the projected peripheral part 21 to the supporting member 3 to annularly cool the predetermined outer peripheral position of the crucible 20. COPYRIGHT: (C)2011,JPO&INPIT |
