SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To increase saturation current by reducing a channel length without lowering off-withstand voltage optimized by a trade-off relationship with on-resistance, in an LDMOS transistor. SOLUTION: A short channel region 12 having polarity reverse to that of a low-concentration body region 10 and high in concentration is selectively formed between the low-concentration body region 10 becoming a channel and an element isolation film 4 and immediately under a gate oxide film 8, and a shape where only a part immediately under the gate oxide film 8 of the body region 10 is retracted toward a high-concentration source region 7 is provided. COPYRIGHT: (C)2011,JPO&INPIT