发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A semiconductor device includes a substrate where an isolation region and an active region are defined, an anti-interference layer formed over the substrate in the isolation region, and a gate line simultaneously crossing the active region and the anti-interference layer.
申请公布号 US2011248338(A1) 申请公布日期 2011.10.13
申请号 US201113165634 申请日期 2011.06.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JEON WEON-CHUL
分类号 H01L29/78 主分类号 H01L29/78
代理机构 代理人
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