发明名称 |
Piezoelectric Gate-Induced Strain |
摘要 |
An embodiment is a semiconductor device. The semiconductor device comprises a substrate, an electrode over the substrate, and a piezoelectric layer disposed between the substrate and the electrode. The piezoelectric layer causes a strain in the substrate when an electric field is generated by the electrode.
|
申请公布号 |
US2011248322(A1) |
申请公布日期 |
2011.10.13 |
申请号 |
US20100758568 |
申请日期 |
2010.04.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WONG KING-YUEN;CHAN CHIEN-TAI;LIN DA-WEN;WU CHUNG-CHENG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|