发明名称 METHOD FOR MANUFACTURING ELECTRODE FOR POWER STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To manufacture an electrode for a power storage device with less deterioration due to charge and discharge, and also to manufacture the power storage device having large capacity and high durability. <P>SOLUTION: In a method for manufacturing an electrode for a power storage device, on one surface of a current collector, a region having high wettability and a region having low wettability are formed. In the region having high wettability, a composition containing silicon, germanium, or tin is calcined after being discharged, and a separated active material is formed on the current collector surface. The electrode for the power storage device with less deterioration due to charge and discharge can be manufactured. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011222493(A) 申请公布日期 2011.11.04
申请号 JP20110051069 申请日期 2011.03.09
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OGINO KIYOFUMI;KURIKI KAZUKI
分类号 H01M4/04;H01G11/06;H01G11/22;H01G11/28;H01G11/30;H01G11/66;H01G11/68;H01G11/70;H01G11/86;H01M4/1395;H01M4/38;H01M4/64;H01M4/66;H01M4/70 主分类号 H01M4/04
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