发明名称 CONDUCTIVE MEMBER AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a conductive member where Sn plating is applied to the outermost surface having a substrate Ni plated layer on the surface of a Cu-based base material, and that has high contact resistance during exposure at a high temperature, and to provide a method for manufacturing the conductive member. <P>SOLUTION: In the conductive member, on the surface of the Cu-based base material 1, a Cu-Sn intermetallic compound layer 4 and an Sn-based surface layer 5 are formed in this order via an Ni-based substrate layer 3. Further, the Cu-Sn intermetallic compound layer includes a Cu<SB POS="POST">3</SB>Sn layer 6 arranged on the Ni-based substrate layer and a Cu<SB POS="POST">6</SB>Sn<SB POS="POST">5</SB>layer 7 arranged on the Cu<SB POS="POST">3</SB>Sn layer. Unevenness is disposed on the surface in contact with an Sn-based surface layer of the Cu-Sn intermetallic compound layer where the Cu<SB POS="POST">3</SB>Sn layer and Cu<SB POS="POST">6</SB>Sn<SB POS="POST">5</SB>layer are stacked. The thickness ratio of the projection to the recess of the Cu-Sn intermetallic compound layer is 1.2-5. The large tilt grain-boundary ratio of the Cu-Sn intermetallic compound layer measured by an EBSD method using a scanning electron microscope having a backscatter electron diffraction image system is 80% or higher. The Ni-based substrate layer contains 0.1-2.0 wt.% of Zn. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011219822(A) 申请公布日期 2011.11.04
申请号 JP20100090538 申请日期 2010.04.09
申请人 MITSUBISHI SHINDOH CO LTD 发明人 SAKURAI TAKESHI;ISHIKAWA SEIICHI;KUBOTA KENJI;TAMAGAWA TAKASHI
分类号 C25D5/12;C25D5/50;C25D7/00 主分类号 C25D5/12
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