| 发明名称 |
METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for realizing an epitaxial substrate having excellent Schottky contact characteristics by improving flatness on a barrier layer surface of the epitaxial substrate by a simple method. <P>SOLUTION: The method of manufacturing an epitaxial substrate for a semiconductor device comprises: a channel layer formation step of epitaxially forming a channel layer composed of a first III group nitride having composition of In<SB POS="POST">x1</SB>Al<SB POS="POST">y1</SB>Ga<SB POS="POST">z1</SB>N(x1+y1+z1=1) including at least Ga on a base substrate; a barrier layer formation step of epitaxially forming a barrier layer composed of a second III group nitride having composition of In<SB POS="POST">x2</SB>Al<SB POS="POST">y2</SB>Ga<SB POS="POST">z2</SB>N(x2+y2+z2=1) including at least In and Al on the channel layer; and a planarization processing step of heating the base substrate on which the barrier layer is formed at a heating temperature that is higher by 100°C or more to 250°C or less than the heating temperature in the barrier layer formation step, thereby improving flatness of the surface of the barrier layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2011222969(A) |
申请公布日期 |
2011.11.04 |
| 申请号 |
JP20110039901 |
申请日期 |
2011.02.25 |
| 申请人 |
NGK INSULATORS LTD |
发明人 |
KURAOKA YOSHITAKA;SUGIYAMA TOMOHIKO;MIYOSHI MAKOTO;TANAKA MITSUHIRO |
| 分类号 |
H01L21/20;H01L21/205;H01L21/28;H01L21/338;H01L29/417;H01L29/778;H01L29/812 |
主分类号 |
H01L21/20 |
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