| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure capable of both reducing turn-on voltage and realizing high withstand voltage. <P>SOLUTION: An SiC vertical diode comprises a cathode electrode 21, an n<SP POS="POST">++</SP>cathode layer 10, an n<SP POS="POST">-</SP>drift layer 11 on the n<SP POS="POST">++</SP>cathode layer, a pair of p<SP POS="POST">+</SP>regions 12, an n<SP POS="POST">+</SP>channel region 16 formed between the n<SP POS="POST">-</SP>drift layer 11 and the p<SP POS="POST">+</SP>regions 12 and sandwiched between a pair of the p<SP POS="POST">+</SP>regions 12, an n<SP POS="POST">++</SP>anode region 14, and an anode electrode 22 formed on the n<SP POS="POST">++</SP>anode region 14 and the p<SP POS="POST">+</SP>regions 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
