| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently adjust a beam current density distribution of each ion beam in an ion-beam-superposed region on a glass substrate irradiated with a plurality of ion beams. <P>SOLUTION: The ion implantation method includes: a beam current density distribution-adjusting step for adjusting ribbon-like shaped ion beams to have a given current density distribution in a predetermined order; a target-correcting step for using a result of the last adjustment of beam current density distribution to correct the beam current density distribution making a target for adjustment for the ion beam to be adjusted subsequently in the beam current density distribution between the beam current density distribution-adjusting steps before adjusting the beam current density distribution of the second or latter ion beams; and a glass substrate-conveying step for conveying the glass substrate in a direction intersecting longitudinal directions of the ribbon-like shaped ion beams. <P>COPYRIGHT: (C)2012,JPO&INPIT |
