| 摘要 |
<p>PURPOSE: A plasma induced damage preventing semiconductor device is provided to improve the integration of a semiconductor device by efficiently reducing a space between transistor active units when a protection diode is arranged. CONSTITUTION: One or more transistor active units(Tr1) are formed on a well(40). A gate electrode(42) is formed on the transistor active unit. A well guard(41) surrounds the transistor active unit. A diode active unit(44) is arranged in an open area(45). A metal wiring(43) electrically connects the gate electrode and the diode active unit.</p> |
