FUSE STRUCTURE, E-FUSE COMPRISING THE FUSE STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE E-FUSE

摘要

PURPOSE: A fuse structure and an electrical fuse including the fuse structure and a semiconductor device including the electrical fuse are provided to prevent a re-growth phenomenon by forming a moisture absorption prevention film which surrounds a fuse conductive layer pattern. CONSTITUTION: First and second electrodes(120,130) are extended to a first direction. One end of the first electrode and one end of the second electrode are separated and are faced each other. An insulating layer(200) is formed between the one end of the first electrode and the one end of the second electrode which are faced each other. A conductive film(162) is touched with the first and second electrodes. The conductive film is formed in the top of the insulating layer by overlapping with a part of the first and second electrodes. A third electrode which is extended to a second direction which is vertical with the first direction is formed in the inner side of the insulating layer.