发明名称 |
FinFET with novel body contact for multiple Vt applications |
摘要 |
FinFET devices are formed with body contact structures enabling the fabrication of such devices having different gate threshold voltages (Vt). A body contact layer is formed to contact the gate electrode (contact) enabling a forward body bias and a reduction in Vt. Two example methods of fabrication (and resulting structures) are provided. In one method, the gate electrode (silicon-based) and body contact layer (silicon) are connected by growing epitaxy which merges the two structures forming electrical contact. In another method, a via is formed that intersects with the gate electrode (suitable conductive material) and body contact layer and is filled with conductive material to electrically connect the two structures. As a result, various FinFETs with different Vt can be fabricated for different applications. |
申请公布号 |
US2012007180(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US20100803776 |
申请日期 |
2010.07.06 |
申请人 |
YIN CHUNSHAN;TAN KIAN MING;LEE JAE GON;GLOBALFOUNDRIES SINGAPORE PTE, LTD. |
发明人 |
YIN CHUNSHAN;TAN KIAN MING;LEE JAE GON |
分类号 |
H01L27/12;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|