| 摘要 |
Provided is a pulsed laser annealing device that allows greater margins in pulsed energy density when annealing semiconductor films by projecting pulsed laser light thereon, without increasing the appropriate pulsed energy density. The pulsed laser annealing device comprises a laser light source that outputs a pulsed laser light, an optical assembly that shapes and guides the pulsed laser light to a semiconductor film to be processed, and a stage whereupon the semiconductor film to which the pulsed laser light is projected is mounted. The pulsed laser light that is projected on the semiconductor film is set so that the rising time for the pulsed energy density to reach the maximum from 10% of the maximum is less than or equal to 35ns, and the falling time for the pulsed energy to reach 10% of the maximum from the maximum is greater than or equal to 80ns. Thus, the device carries out quality annealing, increasing the margin without significantly increasing the pulsed energy density that is appropriate to crystallization, and without causing declines in throughput. |
