| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for removing surely even a crystal defect formed on a position deep from the surface of an SiC layer deposited by an epitaxial growth method. <P>SOLUTION: A resist film 12 is formed on the surface of the SiC layer formed by depositing an epitaxial layer 2 on the surface of a semiconductor substrate 1 comprising a single crystal SiC, and then irradiated with an ultraviolet ray from the rear surface of the substrate, to thereby expose the resist film 12 on the surface. Since the resist film 12 on a part having a crystal defect 11 is not exposed, an opening is formed. Resistances of the epitaxial layer 2 and the semiconductor substrate 1 are heightened, and the crystal defect is removed, by performing ion injection into the opening part. Finally, the resist film 12 is removed, to thereby acquire the SiC substrate capable of forming a semiconductor device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
