METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with high quality capable of preventing the thickness of an oxide film from fluctuating by a large amount due to the concentration of hydrogen varying according to substrate arrangement positions, when a device in which a plurality of substrates are laminated and arranged performs isotropic oxidization.

SOLUTION: A method for manufacturing a semiconductor device comprises a step for conveying a plurality of semiconductor wafers 1 into a treatment chamber 4; a step for heating the treatment chamber 4 and oxidizing the semiconductor wafer 1 by feeding oxygen-containing gas and hydrogen-containing gas under the condition that pressure in the treatment chamber 4 is set lower than the atmospheric pressure; and a step for taking out a plurality of the semiconductor wafers 1 from the treatment chamber 1. In the oxidation treatment step, the hydrogen-containing gas is fed from a plurality of parts in the arrangement direction of the semiconductor wafers 1 in a region corresponding to a substrate arrangement region where a plurality of the semiconductor wafers 1 laminated and arranged in vertical direction, to react the oxygen-containing gas with the hydrogen-containing gas on a plurality of parts of a region corresponding to the substrate arrangement region, to produce a reactive seed and to perform the oxidation treatment.

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