| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a tunnel magnetoresistive element in which decrease in detection accuracy is suppressed. <P>SOLUTION: A method of manufacturing a tunnel magnetoresistive element includes a step for forming, on a substrate 10, a laminate 90 having elongated pin layer 40 and tunnel layer 50 having a planar shape extending in a predetermined direction, and a first protective film 81 arranged to surround the pin layer 40 and the tunnel layer 50 in a state where the surface of the tunnel layer 50 is exposed, a step for forming, on the laminate 90, a free layer 60 of circular planar shape having a diameter longer than the length of the tunnel layer 50 in the direction perpendicular to the direction of extension thereof, and having a portion protruding from the tunnel layer 50 in the direction perpendicular to the direction of extension thereof, and a step for arranging a second protective film 82 covering the free layer 60. <P>COPYRIGHT: (C)2012,JPO&INPIT |
