| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve higher sensitivity without increasing a smear and a chip area. <P>SOLUTION: A thin film region L5a where a film thickness is reduced is provided at an end in the horizontal direction of a charge transfer electrode 5, and a light shielding film 7 is formed, not on a side face of the thin film region L5a, but on the charge transfer electrode 5. Thereby, a distance between the light shielding film 7 and a semiconductor substrate 1 can be reduced, while securing an opening width L6 on a photodiode 2. Accordingly, higher sensitivity can be achieved without increasing a smear and a chip area. <P>COPYRIGHT: (C)2012,JPO&INPIT |
