SEMICONDUCTOR DEVICE

摘要

An MOSFET (100) comprises a silicon carbide substrate (1) which has the main surface (1A) having an off angle against face [0001] of 50° to 65° inclusive, a buffer layer (2) and a drift layer (3) both of which are formed on the main surface (1A), a gate oxide film (91) which is formed on the drift layer (3) so as to contact with drift layer (3), and a p-type body region (4) which is formed in the drift layer (3) so as to contain a region that contacts with the gate oxide film (91) and which has a p-type of electrical conduction type. The density of p-type impurities in the p-type body region (4) is 5 × 1016 cm-3 or more.