| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming very easily a pattern in the order of nanometers which shows high process throughput. <P>SOLUTION: A method for forming a pattern includes a step of forming a film which comprises a pattern forming material containing a copolymer having a polystyrene derivative and a polymethacrylate derivative containing silsesquioxane, a step of forming a microphase separation structure in the film, and a step of etching the substrate with a phase of a polymer chain containing the silsesquioxane as a mask and transferring a pattern of the microphase separation structure on the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
