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发明名称
蚀刻液、蚀刻方法及电子零件之制造方法
摘要
本发明提供一种蚀刻液,其特征在于,用于选择性地蚀刻氮化矽,且含有:水;第一液体,可藉由混合于上述水中而使混合液之沸点达150℃以上;以及第二液体,可生成质子(H+)。或者,本发明提供一种蚀刻液,其特征在于,用于选择性地蚀刻氮化矽,含有水、磷酸及硫酸,且上述磷酸与上述硫酸之体积比为300:32~150:300。
申请公布号
TWI359453
申请公布日期
2012.03.01
申请号
TW096112129
申请日期
2007.04.04
申请人
东芝股份有限公司 日本
发明人
江口胜哉;速水直哉;福井博之
分类号
H01L21/306
主分类号
H01L21/306
代理机构
代理人
陈长文 台北市松山区敦化北路201号7楼
主权项
地址
日本
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