发明名称 |
Offset correction techniques for positioning substrates within a processing chamber |
摘要 |
A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center. |
申请公布号 |
US8135485(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US20080237155 |
申请日期 |
2008.09.24 |
申请人 |
CHEN JACK;BAILEY, III ANDREW D.;MOORING BEN;CAIN STEPHEN J;LAM RESEARCH CORPORATION |
发明人 |
CHEN JACK;BAILEY, III ANDREW D.;MOORING BEN;CAIN STEPHEN J |
分类号 |
H01L21/00;B44C1/22;G05B15/00;G05B19/418;G06F19/00;G06K9/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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