发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 A step of forming a through hole in a semiconductor substrate, or a step of polishing the semiconductor substrate from its back surface requires a very long time and causes decrease of productivity. In addition, when semiconductor substrates are stacked, a semiconductor integrated circuit which is formed of the stack is thick and has poor mechanical flexibility. A release layer is formed over each of a plurality of substrates, layers each having a semiconductor element and an opening for forming a through wiring are formed over each of the release layers. Then, layers each having the semiconductor element are peeled off from the substrates, and then overlapped and stacked, a conductive layer is formed in the opening, and the through wiring is formed; thus, a semiconductor integrated circuit is formed.
申请公布号 US2012061841(A1) 申请公布日期 2012.03.15
申请号 US201113298505 申请日期 2011.11.17
申请人 YAMAGUCHI MAYUMI;IZUMI KONAMI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAGUCHI MAYUMI;IZUMI KONAMI
分类号 H01L23/48 主分类号 H01L23/48
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