| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device using silicon carbide (SiC) that has low on-resistance and can achieve a stable breakdown voltage under high temperatures. <P>SOLUTION: A semiconductor device comprises: a silicon carbide substrate having a first and second primary surfaces; a first silicon carbide layer of a first conductive type provided on the first primary surface; first silicon carbide regions of a second conductive type formed on a surface of the first silicon carbide layer; second silicon carbide regions of a first conductive type formed on surfaces of the first silicon carbide regions; third silicon carbide regions of a second conductive type formed on the surfaces of the first silicon carbide regions; fourth silicon carbide regions of a second conductive type that are formed between the first silicon carbide regions and the second silicon carbide regions and have a higher impurity concentration than that of the first silicon carbide regions; a gate insulating film; a gate electrode formed on the gate insulating film; an interlayer insulating film covering the gate electrode; a first electrode electrically connected to the second silicon carbide regions and the third silicon carbide regions; and a second electrode formed on the second primary surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
