| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a bonded wafer utilizing an ion injection separation method, allowing planarization thermal treatment in an atmosphere containing hydrogen chloride without deteriorating the film thickness uniformity, productivity, and cost performance. <P>SOLUTION: A manufacturing method of a bonded wafer comprises manufacturing a bonded wafer including a silicon thin film on a base wafer by separating a bond wafer at an ion injection layer by an ion injection separation method, and performing thermal treatment on the bonded wafer for planarizing a surface of the silicon thin film in an atmosphere containing hydrogen chloride. The planarization thermal treatment is performed on the bonded wafer in a manner that a silicon ring is disposed so as to surround the periphery of the bonded wafer outside a counterbore of a susceptor on which the bonded wafer is mounted. <P>COPYRIGHT: (C)2012,JPO&INPIT |
