发明名称 LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH DRAIN REGION SELF-ALIGNED TO GATE ELECTRODE
摘要 A disposable structure displaced from an edge of a gate electrode and a drain region aligned to the disposable structure is formed. Thus, the drain region is self-aligned to the edge of the gate electrode. The disposable structure may be a disposable spacer, or alternately, the disposable structure may be formed simultaneously with, and comprise the same material as, a gate electrode. After formation of the drain regions, the disposable structure is removed. The self-alignment of the drain region to the edge of the gate electrode provides a substantially constant drift distance that is independent of any overlay variation of lithographic processes.
申请公布号 US2012126319(A1) 申请公布日期 2012.05.24
申请号 US201213364663 申请日期 2012.02.02
申请人 FEILCHENFELD NATALIE B.;GAMBINO JEFFREY P.;LIU XUEFENG;VOEGELI BENJAMIN T.;VOLDMAN STEVEN H.;ZIERAK MICHAEL J.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FEILCHENFELD NATALIE B.;GAMBINO JEFFREY P.;LIU XUEFENG;VOEGELI BENJAMIN T.;VOLDMAN STEVEN H.;ZIERAK MICHAEL J.
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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