| 摘要 |
The present invention provides a method for forming a channel material, comprising: forming a substrate; forming an MOS device with a dummy gate stack on the substrate; removing the dummy gate stack; forming a channel trench at the channel located under the dummy gate stack; filling the channel trench with the channel material; and forming a gate stack. According to the embodiments of the present invention, the channel material is formed by a replacement gate process after the high temperature process, such as a high temperature annealing, thereby any negative influence on the formed channel material due to the high temperature process may be effectively avoided. |
