SEMICONDUCTOR STRUCTURE AND MANUFACTURE METHOD THEREOF

摘要

A semiconductor structure comprises a first, second and third interlayer structures. The first interlayer structure includes a first dielectric layer (300) and a first contact plug (320). The first dielectric layer (300) is flush with a gate stack or covers the gate stack while the first contact plug (320) penetrates through the first dielectric layer (300) and electrically connects to at least a part of the drain/source (110) region. The second interlayer structure includes a cap layer (400) and a second contact plug (420). The cap layer (400) covers the first interlayer structure while the second contact plug (420) penetrates through the cap layer (400) and electrically connects to the first contact plug (320) and the gate stack through a first linear layer. The third interlayer structure includes a second dielectric layer (500) and a third contact plug (520). The second dielectric layer (500) covers the second interlayer structure while the third contact plug (520) penetrates through the second dielectric layer (500) and electrically connects to the second contact plug (420) through a second linear layer. A manufacture method of the semiconductor structure is also provided, which can save the area to increase the integration of the semiconductor structure.