发明名称 Surface diffusion-induced atomic layer deposition
摘要 PURPOSE: A surface diffusion-induced atomic layer deposition method is provided to form a uniform atomic layer in deep pores of a carrier within a short time. CONSTITUTION: A surface diffusion-induced atomic layer deposition method comprises the steps of: providing a precursor to be chemically adsorbed on a porous carrier, supplying induction gas for surface diffusion of the precursor on the porous carrier, supplying inactivated gas for purging and discharging unadsorbed precursor, reaction byproducts, or induction gas, forming an atomic layer through reaction between the precursor and the reaction gas, and resupplying inactivated gas for purging.
申请公布号 KR20120058723(A) 申请公布日期 2012.06.08
申请号 KR20100120139 申请日期 2010.11.30
申请人 KONKUK UNIVERSITY INDUSTRIAL COOPERATION CORP.;S-OIL CORPORATION 发明人 MIN, YO SEP;AHN, YOUNG SOO;SONG, CHAN JU;PAIK, SANG CHEOL;LEE, SANG GOO
分类号 C23C16/44;C23C16/16;H01L21/205 主分类号 C23C16/44
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