发明名称 |
Transistors with metal gate and methods for forming the same |
摘要 |
A semiconductor device includes at least one first gate dielectric layer over a substrate. A first transition-metal oxycarbide (MCxOy) containing layer is formed over the at least one first gate dielectric layer, wherein the transition-metal (M) has an atomic percentage of about 40 at. % or more. A first gate is formed over the first transition-metal oxycarbide containing layer. At least one first doped region is formed within the substrate and adjacent to a sidewall of the first gate. |
申请公布号 |
US8198685(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20080343307 |
申请日期 |
2008.12.23 |
申请人 |
LIU CHUNG-SHI;CHIU YUNG-SHENG;LIN CHENG-TUNG;YU CHEN-HUA;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU CHUNG-SHI;CHIU YUNG-SHENG;LIN CHENG-TUNG;YU CHEN-HUA |
分类号 |
H01L27/092;H01L21/28 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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