发明名称 Method of processing silicon substrate and method of manufacturing liquid discharge head
摘要 A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an aperture being formed on one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from the aperture on the one surface, from the one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from the one surface through the aperture of the etching mask layer.
申请公布号 US8197705(B2) 申请公布日期 2012.06.12
申请号 US20080203536 申请日期 2008.09.03
申请人 KISHIMOTO KEISUKE;KOMURO HIROKAZU;IBE SATOSHI;HATSUI TAKUYA;ASAI KAZUHIRO;OTAKA SHIMPEI;KOMIYAMA HIROTO;CANON KABUSHIKI KAISHA 发明人 KISHIMOTO KEISUKE;KOMURO HIROKAZU;IBE SATOSHI;HATSUI TAKUYA;ASAI KAZUHIRO;OTAKA SHIMPEI;KOMIYAMA HIROTO
分类号 G01D15/00;G11B5/127 主分类号 G01D15/00
代理机构 代理人
主权项
地址