| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI substrate in which a gettering site is formed on an active layer substrate with a simple method to provide a gettering function to the SOI substrate through the site. <P>SOLUTION: A manufacturing method is a manufacturing method of an SOI substrate 1 in which an active layer substrate 11 and a support substrate 13 are bonded to each other. The manufacturing method includes: a hole formation step in which holes are formed on a main surface of the active layer substrate 11 on the side to which the support substrate 13 is bonded; an Si growth step in which Si12 is grown on the bonded surface side of the active layer substrate 11; and a thermal treatment step in which a BOX oxide film that the support substrate 13 has is bonded to the main surface of the active layer substrate 11 on which the holes are formed through thermal treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
