SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to improve light extraction efficiency by thickening an n type semiconductor layer to improve a current diffusion effect. CONSTITUTION: A p type electrode(135) is formed on a conductive substrate(140). A light emitting structure is formed on the p type electrode and includes a p type semiconductor layer(125), an active layer(120), and an n type semiconductor layer(115). The n type semiconductor layer includes a high density layer(115a) and a low density layer(115b,115c). An n type electrode(145) is formed on the n type semiconductor layer.